Electronic Devices & Circuits - Electronic Engineering (MCQ) Questions & Answers (Part 2)

8)   What would happen if 180° phase shifted signal between input voltage (V_i) and drain-to-source voltage (V_GS) will be passed through the output coupling capacitor during the operation of MOSFET as an amplifier?

a. DC value will be reduced to unity

b. DC value will be reduced to zero

c. DC value will be reduced to infinity

d. None of the above

Answers

9)   Which among the below stated consequences occur in the negative half-cycle during the operation of MOSFET as an amplifier? a. Variation in VGS sinusoidally below VGSQ b. Variation in ID sinusoidally below IDQ c. Variation in voltage drop IDRD below its Q-point value d. All of the above Answers 10)   The output signal generated corresponding to the magnified input signal by a linear amplifier is _________ A. Larger in size B. Smaller in size C. Similar in shape as that of input signal D. Different in shape as that of input signal a. A & C b. B & D c. B & C d. A & D Answers 11)   Subthreshold current is basically a drain current that flows only when __________ a. VGS is slightly greater than VT b. VGS is slightly less than VT c. VGS is exactly equal to VT d. None of the above Answers 12)   Which type of breakdown can be prevented by adopting a reverse-biased gate protecting diode on input side of MOSFET? a. Avalanche breakdown b. Punch through breakdown c. Snapback breakdown d. Static Charge Breakdown Answers 13)   Near-avalanche breakdown in MOSFET is an ultimate outcome of _________ a. First order effects b. Second order effects c. Third order effects d. None of the above Answers 14)   Which type of breakdown effect gets enhanced due to parasitic BJT action along with increase in drain current solely by the reduction in size of MOSFET? a. Near-avalanche breakdown b. Snapback breakdown c. Both a and b d. None of the above Answers

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Electronic Devices & Circuits - Electronic Engineering (MCQ) Questions & Answers (Part 1)

1)   Which among the below mentioned implementation strategies is/are precise to obtain an AC equivalent circuit of MOSFET?
A. Replacement of all capacitors by open circuits
B. Replacement of all capacitors by short circuits
C. Setting of all DC voltages to zero
D. Setting of all DC voltages to unity
 Answers

2)   The value of transconductance decreases in simplified low frequency equivalent circuit of n-channel MOSFET due to increase in the value of _______
a. Source resistance

b. Load resistance

c. Both a and b

d. None of the above

Answers

3)   What is the effect of MOSFET biasing in the saturation region especially while representing the internal resistances and capacitances in n-channel E-MOSFET configuration?

a. Channel gets pinched off at the drain by increasing the value of C_gd

b. Channel gets pinched off at the source by increasing the value of C_gd

c. Channel gets pinched off at the drain by decreasing the value of C_gd upto zero

d. Channel gets pinched off at the source by decreasing the value of C_gd

Answers

4)   Which among the following are specifically the advantages of bipolar design technology?

A. High input resistance at low frequencies
B. Zero input bias current
C. High voltage gain
D. High value of transconductance

a. A & B

b. A & C

c. B & D

d. C & D

Answers

5)   Which condition is applicable for a body to be more positive than source in a small signal equivalent circuit of N-type MOSFET inclusive of body effect?

a. V_bs > 0

b. V_bs < 0

c. V_bs = 0

d. None of the above

Answers

6)   What should be the value of transconductance, if N-channel E-MOSFET is biased in saturation region with the conduction parameter (k) = 0.836 mA/ V² and drain current (I_D) = 1.5 mA?

a. 1 mA/V

b. 1.5 mA/V

c. 2.23 mA/V

d. 4.23 mA/V

Answers

7)   What does an arrow indicate in the below drawn graph of small signal operation executed by MOSFET? a. Active Region b. Cut-off Region c. Saturation Region d. Breakdown Region

Answers

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Electronic Devices & Circuits - Electronic Engineering (MCQ) Answers (English version)

Part 1

1.  ANSWER: B & C
2. ANSWER: Source resistance
3. ANSWER: Channel gets pinched off at the drain by decreasing the value of C_gd upto zero
4. ANSWER: C & D
5. ANSWER: V_bs > 0
6. ANSWER: 2.23 mA/V
7. ANSWER: Saturation Region

Part 2

8. ANSWER: DC value will be reduced to zero
9. ANSWER  All of the above
10.ANSWER: A & C
11.ANSWER: V_GS is slightly less than V_T
12.ANSWER: Static Charge Breakdown
13.ANSWER: Second order effects
14.ANSWER: Both a and b
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