1) Which among the below mentioned implementation strategies is/are precise to obtain an AC equivalent circuit of MOSFET?
A. Replacement of all capacitors by open circuits
B. Replacement of all capacitors by short circuits
C. Setting of all DC voltages to zero
D. Setting of all DC voltages to unity
Answers
A. Replacement of all capacitors by open circuits
B. Replacement of all capacitors by short circuits
C. Setting of all DC voltages to zero
D. Setting of all DC voltages to unity
Answers
2) The value of transconductance decreases in simplified low frequency equivalent circuit of n-channel MOSFET due to increase in the value of _______
a. Source resistance
a. Source resistance
b. Load resistance
c. Both a and b
d. None of the above
3) What is the effect of MOSFET biasing in the saturation region especially while representing the internal resistances and capacitances in n-channel E-MOSFET configuration?
a. Channel gets pinched off at the drain by increasing the value of Cgd
b. Channel gets pinched off at the source by increasing the value of Cgd
c. Channel gets pinched off at the drain by decreasing the value of Cgd upto zero
d. Channel gets pinched off at the source by decreasing the value of Cgd
4) Which among the following are specifically the advantages of bipolar design technology?
A. High input resistance at low frequencies
B. Zero input bias current
C. High voltage gain
D. High value of transconductance
5) Which condition is applicable for a body to be more positive than source in a small signal equivalent circuit of N-type MOSFET inclusive of body effect?
A. High input resistance at low frequencies
B. Zero input bias current
C. High voltage gain
D. High value of transconductance
a. A & B
b. A & C
c. B & D
d. C & D
5) Which condition is applicable for a body to be more positive than source in a small signal equivalent circuit of N-type MOSFET inclusive of body effect?
a. Vbs > 0
b. Vbs < 0
c. Vbs = 0
d. None of the above
6) What should be the value of transconductance, if N-channel E-MOSFET is biased in saturation region with the conduction parameter (k) = 0.836 mA/ V2 and drain current (ID) = 1.5 mA?
a. 1 mA/V
b. 1.5 mA/V
c. 2.23 mA/V
d. 4.23 mA/V
| 7) What does an arrow indicate in the below drawn graph of small signal operation executed by MOSFET?
a. Active Region
b. Cut-off Region
c. Saturation Region
d. Breakdown Region
| ||